Investigation of carrier-confinement and dark current minimization in In0.5Ga0.5As QDIP with the incorporation of In0.21Al0.21Ga0.58As/GaAs capping

Ravinder Kumar; Debiprasad Panda; Debabrata Das; Vinayak Chavan; Raman Kumar; Subhananda Chakrabarti; Sreedhara Sheshadri

doi:10.1117/12.2508488

4 March 2019 Investigation of carrier-confinement and dark current minimization in In_0.5Ga_0.5As quantum dot infrared photodetector with the incorporation of In_0.21Al_0.21Ga_0.58As/GaAs capping

Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, Sreedhara Sheshadri

Author Affiliations +

Proceedings Volume 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI; 1092910 (2019) https://doi.org/10.1117/12.2508488
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

The improvement in performance of In_0.5Ga_0.5As Quantum Dot Infrared Photodetector (QDIP) has been investigated by introducing Al in the In_0.15Ga_0.85As capping layer. The QDIPs are consist of ten uncoupled In_0.5Ga_0.5As dot layers with 3/47 nm In_x(Al_y(~x))Ga_1-x-yAs/GaAs capping. The monolayer coverage for both QDIPs is 6, which accommodate an overgrowth percentage of 59%. A FWHM (46.59 nm) and higher activation energy (267 meV) has been obtained for the ground state photoluminescence emission due to the incorporation of Al in the InGaAs capping layer. This indicates better carrier confinement and homogeneous dot size distribution in the quaternary (In_0.21Al_0.21Ga_0.58As) capped QD structure with respect to the ternary (In_0.15Ga_0.85As) capped QD. A six order reduction in dark current density has been obtained in the InGaAs QDIP due to the incorporation of Al in the capping layer. The narrow spectral width of 0.07 for the transition peak at 7.8 μm represents the homogeneous dot size distribution in the InAlGaAs/GaAs capped QDIP heterostructure.

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Ravinder Kumar, Debiprasad Panda, Debabrata Das, Vinayak Chavan, Raman Kumar, Subhananda Chakrabarti, and Sreedhara Sheshadri "Investigation of carrier-confinement and dark current minimization in In_0.5Ga_0.5As quantum dot infrared photodetector with the incorporation of In_0.21Al_0.21Ga_0.58As/GaAs capping", Proc. SPIE 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI, 1092910 (4 March 2019); https://doi.org/10.1117/12.2508488

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