Impact of ternary capping on p-i-p InAs/GaAs quantum-dot infrared photodetectors

Vidya P. Deviprasad; Hemant Ghadi; Debabrata Das; Debiprasad Panda; Subhananda Chakrabarti

doi:10.1117/12.2508669

4 March 2019 Impact of ternary capping on p-i-p InAs/GaAs quantum-dot infrared photodetectors

Vidya P. Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

Proceedings Volume 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI; 1092912 (2019) https://doi.org/10.1117/12.2508669
Event: SPIE OPTO, 2019, San Francisco, California, United States

Abstract

Self-assembled InAs/GaAs quantum dot infrared photodetectors (QDIPs) have been proved suitable candidates for infrared photodetectors due to their excellent carrier confinement, normal-incidence absorption, reduced electron– phonon scattering and long excited carrier lifetime. This study investigates the effect of ternary (InGaAs) capping on InAs/GaAs p-i-p QDIP grown on semi-insulating GaAs substrate using Molecular Beam Epitaxy (MBE). The performance of InAs/GaAs QDIP (device A) is compared with InAs/InGaAs/GaAs QDIP (device B), in which ternary (InGaAs) capping of 6nm thickness was introduced just above the InAs quantum dot layer. The room temperature photoluminescense peak was observed at a wavelength of 1139.7nm and 1310.1nm for sample A and B, respectively. The activation energy was calculated to be 222.93 and 142.325 meV for sample A and B, respectively. From fabricated single pixel detectors, the dark current densities measured for an applied bias of -0.5V at 13 K were 0.5mA/cm² and 0.54A/cm² for device A and B, respectively. Devices exhibited spectral response peaks around 1.93μm and 1.52 μm for device A and device B, respectively. The measured peak can be attributed to the transition between ground state of hole to split off band. At 175K, the peak responsivity calculated was 5.8 A/W for GaAs capped device (A) as compared to 0.55 A/W for InGaAs capped device (B). Highest operating temperature exhibited by GaAs capped device A was 200K. Since the observed dark current densities was higher in comparison with device A, the highest operating temperature observed for device B was limited to 175K.

Citation Download Citation

Vidya P. Deviprasad, Hemant Ghadi, Debabrata Das, Debiprasad Panda, and Subhananda Chakrabarti "Impact of ternary capping on p-i-p InAs/GaAs quantum-dot infrared photodetectors", Proc. SPIE 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI, 1092912 (4 March 2019); https://doi.org/10.1117/12.2508669

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KEYWORDS

Gallium arsenide

Indium gallium arsenide

Infrared radiation

Quantum dots

Infrared photography

Photodetectors

Short wave infrared radiation

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