Presentation + Paper
4 March 2019 A highly linear piezoelectric quasi-static MEMS mirror with mechanical tilt angles of larger than 10°
S. Gu-Stoppel, T. Lisec, S. Fichtner, N. Funck, C. Eisermann, F. Lofink, B. Wagner, A. Müller-Groeling
Author Affiliations +
Proceedings Volume 10931, MOEMS and Miniaturized Systems XVIII; 1093102 (2019) https://doi.org/10.1117/12.2509577
Event: SPIE OPTO, 2019, San Francisco, California, United States
Abstract
This paper presents a new type of piezoelectric quasi-static mirror, which utilizes a three-level-construction comprising a mirror plate (diameter = 0.8 mm), a pillar and four actuators hidden beneath the mirror plate, reducing the chip size to 1.3 mm2 . Special folded springs connecting the pillar and actuators are applied to reduce the mechanical non-linearity. Moreover, the newly developed piezoelectric material AlScN delivers large force enabling a mechanical tilting angle of ±12.5° at 150 VDC, as well as benefits like great linearity, repeatability and long-term stability. No angle change larger than 0.02° was observed during 100 on-and-off switching circles with 5 s intervals under 100 VDC. Long-term test over 76 hours under 100 VDC has shown maximum 0.1°shift. More precise measurements are ongoing. Based on the great linearity a simple closed-loop-control has also been developed and more results will be presented in the near future.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Gu-Stoppel, T. Lisec, S. Fichtner, N. Funck, C. Eisermann, F. Lofink, B. Wagner, and A. Müller-Groeling "A highly linear piezoelectric quasi-static MEMS mirror with mechanical tilt angles of larger than 10°", Proc. SPIE 10931, MOEMS and Miniaturized Systems XVIII, 1093102 (4 March 2019); https://doi.org/10.1117/12.2509577
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Actuators

Mirrors

Semiconducting wafers

Wafer bonding

Microelectromechanical systems

Deep reactive ion etching

Electrodes

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