We present a FPI with a (TiO2/SiO2)3 reflector stack with a reflectance of 97 % and TiO2 as high refractive index layer for the use in the VIS-range of 555 nm to 585 nm. Main achievements of TiO2 instead of Si3N4 are a higher reflectance and a minimized reflector complexity. Furthermore, we introduce a dry etch process which is compatible and integrated in the manufacturing process chain of the MEMS FPI. Manufacturing of the 7.5 mm x 7.5 mm chip size FPI is done on 6" wafers consisting of a moveable reflector on a 210 nm thin and 5 mm in diameter LP-Si3N4 membrane and a fixed reflector with an aperture of 2 mm in diameter. The measured peak transmittance is between 28 % and 37 % with a FWHM bandwidth between 1.5 nm and 1.8 nm. It could be shown that the FPIs are tunable over the spectral range from 555 nm to 585 nm with a maximum control voltage of 45 V using the 18th interference order. |
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CITATIONS
Cited by 1 scholarly publication.
Reflectors
Semiconducting wafers
Silicon
Etching
Reflectivity
Refractive index
Transmittance