Characterization Of GaAs Monolithic Circuits By Optical Techniques

H-L. A. Hung; T. T. Lee; P. Polak-Dingels; E. Chauchard; K. Webb; C. H. Lee; H. C. Huang

doi:10.1117/12.960543

14 August 1989 Characterization Of GaAs Monolithic Circuits By Optical Techniques

H-L. A. Hung, T. T. Lee, P. Polak-Dingels, E. Chauchard, K. Webb, C. H. Lee, H. C. Huang

Proceedings Volume 1102, Optical Technology for Microwave Applications IV; (1989) https://doi.org/10.1117/12.960543
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States

Abstract

Optical techniques for broadband microwave signal generation and detection have been developed to characterize monolithic microwave integrated circuits (MMICs). Emphasis is on the enhancement of measurement accuracy and the identification of limitations. De-embedded complex S-parameters are derived from time-domain data obtained from both a GaAs photoconductive switch and electro-optic sampling of a Ka-band MMIC power amplifier. These parameters are directly compared with those measured from a network analyzer of the same circuit.

Citation Download Citation

H-L. A. Hung, T. T. Lee, P. Polak-Dingels, E. Chauchard, K. Webb, C. H. Lee, and H. C. Huang "Characterization Of GaAs Monolithic Circuits By Optical Techniques", Proc. SPIE 1102, Optical Technology for Microwave Applications IV, (14 August 1989); https://doi.org/10.1117/12.960543

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