TCAD-based performance analysis of nanoscale vacuum field-emission transistors at advanced technology nodes

I. D. Evsikov; N. A. Djuzhev; G. D. Demin; M. A. Makhiboroda

doi:10.1117/12.2522483

15 March 2019 TCAD-based performance analysis of nanoscale vacuum field-emission transistors at advanced technology nodes

I. D. Evsikov, N. A. Djuzhev, G. D. Demin, M. A. Makhiboroda

Author Affiliations +

Proceedings Volume 11022, International Conference on Micro- and Nano-Electronics 2018; 110220O (2019) https://doi.org/10.1117/12.2522483
Event: The International Conference on Micro- and Nano-Electronics 2018, 2018, Zvenigorod, Russian Federation

Abstract

Full fabrication process of nanoscale vacuum channel and gate-all-around nanowire transistors at the 45, 32 and 22 nm technology nodes was simulated in Silvaco TCAD. Comparative analysis of operation modes was made on the basis of the obtained structures. It was shown that nanoscale gate-all-around transistor has sufficiently low power consumption while vacuum channel field effect transistor makes it possible to achieve performance that exceeds performance which can be obtained from the transistor with semiconductor channel. The combination of the above technologies can serve as approach to the creation of low-power and high-speed nanoscale vacuum devices using established complementary metal-oxide-semiconductor (CMOS) technology.

Citation Download Citation

I. D. Evsikov, N. A. Djuzhev, G. D. Demin, and M. A. Makhiboroda "TCAD-based performance analysis of nanoscale vacuum field-emission transistors at advanced technology nodes", Proc. SPIE 11022, International Conference on Micro- and Nano-Electronics 2018, 110220O (15 March 2019); https://doi.org/10.1117/12.2522483

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