High energy excimer laser system for nanosecond annealing of semiconductor devices

Hervé Besaucèle; Audrey Adnet; François Beau; Yacine Bouksou; Cédric Bellier; Paul Ceccato; Maxime Chatelain; Nabil Douri; Hervé Dusserre; Cyril Dutems; Martin Heintzmann; Karim Huet; Mathieu Lenormand; Bobby Lespinasse; Vincent Martinez; Fulvio Mazzamuto; Antoine Melin; Sylvain Perrot; David Rodrigues; Laurent Ruet; Olivier Sannier; Guillaume Thebault; Inès Toqué-Tresonne; Armand Vestraete; Karim Zekri

doi:10.1117/12.2522443

3 January 2019 High energy excimer laser system for nanosecond annealing of semiconductor devices

Hervé Besaucèle, Audrey Adnet, François Beau, Yacine Bouksou, Cédric Bellier, Paul Ceccato, Maxime Chatelain, Nabil Douri, Hervé Dusserre, Cyril Dutems, Martin Heintzmann, Karim Huet, Mathieu Lenormand, Bobby Lespinasse, Vincent Martinez, Fulvio Mazzamuto, Antoine Melin, Sylvain Perrot, David Rodrigues, Laurent Ruet, Olivier Sannier, Guillaume Thebault, Inès Toqué-Tresonne, Armand Vestraete, Karim Zekri

Author Affiliations +

Proceedings Volume 11042, XXII International Symposium on High Power Laser Systems and Applications; 110420S (2019) https://doi.org/10.1117/12.2522443
Event: XXII International Symposium on High Power Laser Systems and Applications, 2018, Frascati, Italy

Abstract

We present a high energy UV, 308 nm Xenon-Chloride excimer laser system providing a precisely controlled ultra-fast (nanosecond scale) thermal processing of semiconductor devices. The main elements of the system are described and key performance indicators are presented.

Citation Download Citation

Hervé Besaucèle, Audrey Adnet, François Beau, Yacine Bouksou, Cédric Bellier, Paul Ceccato, Maxime Chatelain, Nabil Douri, Hervé Dusserre, Cyril Dutems, Martin Heintzmann, Karim Huet, Mathieu Lenormand, Bobby Lespinasse, Vincent Martinez, Fulvio Mazzamuto, Antoine Melin, Sylvain Perrot, David Rodrigues, Laurent Ruet, Olivier Sannier, Guillaume Thebault, Inès Toqué-Tresonne, Armand Vestraete, and Karim Zekri "High energy excimer laser system for nanosecond annealing of semiconductor devices", Proc. SPIE 11042, XXII International Symposium on High Power Laser Systems and Applications, 110420S (3 January 2019); https://doi.org/10.1117/12.2522443

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