Paper
12 September 1989 Growth Of CdTe Crystals By The Heat Exchanger Method (HEMN)
C. P. Khattak, F. Schmid
Author Affiliations +
Abstract
The poor thermal conductivity of CdTe has prevented controlled directional solidification and, therefore, completely single crystal growth is not achieved on a routine basis. The Heat Exchanger Method (HE(TM)) has been adapted for the growth of 600 g, 5.5 cm diameter and 1300 g, 7.5 cm diameter CdTe ingots. Emphasis was placed on achieving controlled directional solidification. Unseeded crystal growth was carried out using presynthesized CdTe as meltstock and without the use of a separate Cd or Te reservoir to control stoichiometry. It was demonstrated that only two grains were formed and the structure was maintained during growth. Twinning was minimized and large twin-free samples could be obtained. The EPD values of CdTe were in the range of 103 to 5x105/cm2. Most of the material was p-type, but CdTe with 105 ohm-cm resistivity was grown. An absorption coefficient as low as 0.07/cm was measured showing that the crystals were suitable for CO2 laser modulator applications.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. P. Khattak and F. Schmid "Growth Of CdTe Crystals By The Heat Exchanger Method (HEMN)", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); https://doi.org/10.1117/12.960628
Lens.org Logo
CITATIONS
Cited by 13 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Crystals

Solids

Cadmium

Absorption

Infrared detectors

Interfaces

Liquids

RELATED CONTENT

Cadmium Mercury Telluride - A UK Perspective
Proceedings of SPIE (November 22 1986)
Advances In (Hg,Cd)Te Materials Technology
Proceedings of SPIE (August 06 1980)
Developments In Large CdTe Substrate Growth
Proceedings of SPIE (August 10 1983)

Back to Top