The Role Of n+-Accumulation Layers On The Carrier Lifetime Of n-Hg1-xCdxTe

G. Mahr von Staszewski; R. Wollrab

doi:10.1117/12.960634

12 September 1989 The Role Of n+-Accumulation Layers On The Carrier Lifetime Of n-Hg_1-xCd_xTe

G. Mahr von Staszewski, R. Wollrab

Proceedings Volume 1106, Future Infrared Detector Materials; (1989) https://doi.org/10.1117/12.960634
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States

Abstract

A strong reduction of the n+-accumulation layer in n-Hgl-xCdxTe (MCT) samples after UV-irradiation was recently reported l 2 3 4. This effect produced by electron trapping in deep levels of the passivation oxide, lasts several hours at 77 K and even more at 4 K. The sample surfaces are driven into a "quasi" depletion state. Upon UV-illumination we now observed a ten-fold decrease in the carrier lifetime. Obviously this is a consequence of the "quasi" depletion state, in which the electron-holes pairs recombine now with a much shorter time constant characteristical of the depletion regions 5 8.

Citation Download Citation

G. Mahr von Staszewski and R. Wollrab "The Role Of n+-Accumulation Layers On The Carrier Lifetime Of n-Hg_1-xCd_xTe", Proc. SPIE 1106, Future Infrared Detector Materials, (12 September 1989); https://doi.org/10.1117/12.960634

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