PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
We show a fully integrated, coherently combined laser system in the InP-Si3N4 hybrid platform. Coherent combining of two InP-based gain chips is obtained with a combining efficiency of ~92%. Besides, we demonstrate narrow-linewidth, tunable diode lasers in InP/GaAs-Si3N4 platform. The Si3N4 photonic integrated circuit performs as a tunable external cavity for both InP and GaAs gain chips simultaneously. Single frequency lasing at 1.55 and 1 um is simultaneously obtained on a single chip with the spectral linewidths of 18-kHz and 70-kHz respectively. We also obtain wide-angle beam steering by using the wide wavelength tuning range provided by dual-band diode lasers.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Yeyu Zhu, Siwei Zeng, Yunsong Zhao, Lin Zhu, "Hybrid integration of active semiconductor devices with passive micro/nano optical structures for emerging applications," Proc. SPIE 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, 1108908 (3 September 2019); https://doi.org/10.1117/12.2528913