Presentation + Paper
3 September 2019 Hybrid integration of active semiconductor devices with passive micro/nano optical structures for emerging applications
Yeyu Zhu, Siwei Zeng, Yunsong Zhao, Lin Zhu
Author Affiliations +
Abstract
We show a fully integrated, coherently combined laser system in the InP-Si3N4 hybrid platform. Coherent combining of two InP-based gain chips is obtained with a combining efficiency of ~92%. Besides, we demonstrate narrow-linewidth, tunable diode lasers in InP/GaAs-Si3N4 platform. The Si3N4 photonic integrated circuit performs as a tunable external cavity for both InP and GaAs gain chips simultaneously. Single frequency lasing at 1.55 and 1 um is simultaneously obtained on a single chip with the spectral linewidths of 18-kHz and 70-kHz respectively. We also obtain wide-angle beam steering by using the wide wavelength tuning range provided by dual-band diode lasers.
Conference Presentation
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yeyu Zhu, Siwei Zeng, Yunsong Zhao, and Lin Zhu "Hybrid integration of active semiconductor devices with passive micro/nano optical structures for emerging applications", Proc. SPIE 11089, Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, 1108908 (3 September 2019); https://doi.org/10.1117/12.2528913
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CITATIONS
Cited by 1 scholarly publication.
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KEYWORDS
Semiconductor lasers

Beam steering

Waveguides

Integrated optics

Photonic integrated circuits

Active optics

Gallium arsenide

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