Paper
16 September 2019 Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors
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Abstract
The development of high-sensitivity magnetic field sensors at low frequencies and ambient temperatures is of great importance for many practical applications, where different aspects of the sensor performance need to be considered. In this paper, it is presented that by tuning magnetic nanostructures of the free layers in magnetic tunnel junctions, widedynamic-range or ultra-high-sensitivity tunneling magnetoresistive sensors can be obtained. Tunneling magnetoresistive sensors with a linear response from -75 mT to +75 mT are demonstrated. Also, it is demonstrated that an optimized ultra-high-sensitivity magnetic sensor with a sensitivity of 57,790 %/mT can be achieved. This sensitivity is currently the highest among all magnetoresistive sensors that have been reported. The estimated noise of our magnetic sensor is 2.3 pT/Hz1/2 at 1 Hz and 190 fT/Hz1/2 at 100 Hz respectively. This tunneling magnetoresistive sensor dissipates only 25 μW of power when it operates under an applied voltage of 1 V at room temperature.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaolu Yin, Yi Yang, Yen-Fu Liu, Jiong Hua, Andrei Sokolov, Dan Ewing, Paul J. De Rego, Kaizhong Gao, and Sy-Hwang Liou "Recent progress in the development of high-sensitivity tunneling magnetoresistive sensors", Proc. SPIE 11090, Spintronics XII, 110903H (16 September 2019); https://doi.org/10.1117/12.2529569
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Cited by 3 scholarly publications.
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KEYWORDS
Magnetism

Magnetic sensors

Sensors

Annealing

Ruthenium

Temperature metrology

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