Investigation of InAs–based devices for topological applications

Matteo Carrega; Stefano Guiducci; Andrea Iorio; Lennart Bours; Elia Strambini; Giorgio Biasiol; Mirko Rocci; Valentina Zannier; Lucia Sorba; Fabio Beltram; Stefano Roddaro; Francesco Giazotto; Stefan Heun

doi:10.1117/12.2527754

16 September 2019 Investigation of InAs–based devices for topological applications

Matteo Carrega, Stefano Guiducci, Andrea Iorio, Lennart Bours, Elia Strambini, Giorgio Biasiol, Mirko Rocci, Valentina Zannier, Lucia Sorba, Fabio Beltram, Stefano Roddaro, Francesco Giazotto, Stefan Heun

Author Affiliations +

Proceedings Volume 11090, Spintronics XII; 110903Z (2019) https://doi.org/10.1117/12.2527754
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin–orbit component. Here, we report on InAs-based devices both in one–dimensional and two–dimensional configurations. In the former, low-temperature measurements on a suspended nanowire are presented, inspecting the intrinsic spin–orbit contribution of the system. In the latter, Josephson Junctions between two Nb contacts comprising an InAs quantum well are investigated. Supercurrent flow is reported, with Nb critical temperature up to Tc ∼ 8 K. Multiple Andreev reflection signals are observed in the dissipative regime. In both systems, we show that the presence of external gates represents a useful knob, allowing for wide tunability and control of device properties, such as spin–orbit coherence length or supercurrent amplitude.

Conference Presentation

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Matteo Carrega, Stefano Guiducci, Andrea Iorio, Lennart Bours, Elia Strambini, Giorgio Biasiol, Mirko Rocci, Valentina Zannier, Lucia Sorba, Fabio Beltram, Stefano Roddaro, Francesco Giazotto, and Stefan Heun "Investigation of InAs–based devices for topological applications", Proc. SPIE 11090, Spintronics XII, 110903Z (16 September 2019); https://doi.org/10.1117/12.2527754

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