Low dark current diffusion limited planar type InGaAs photodetectors

M. Halit Dolas; Okan Atesal; M. Deniz Caliskan; Alpan Bek; Ekmel Ozbay

doi:10.1117/12.2528666

9 September 2019 Low dark current diffusion limited planar type InGaAs photodetectors

M. Halit Dolas, Okan Atesal, M. Deniz Caliskan, Alpan Bek, Ekmel Ozbay

Proceedings Volume 11129, Infrared Sensors, Devices, and Applications IX; 111290D (2019) https://doi.org/10.1117/12.2528666
Event: SPIE Optical Engineering + Applications, 2019, San Diego, California, United States

Abstract

In this work, we design and produce 1280x1024 format InGaAs based planar type detectors with 15μm pixel pitch. We have obtained diffusion current limited low dark current (~10fA) and high responsivity (1.08A/W at 1.55μm) values at room temperature conditions. Moreover, dark current modeling is performed using diffusion, generation and recombination (GR) and trap assisted tunneling (TAT) current mechanisms. Ideality factor is extracted from forward bias characteristics. Excellent match between modeling and experimental data is reached. Also, temperature dependency of dark current is studied in 10°C – 60°C ranges. The area and perimeter related dark current components are differentiated using test detectors with changing diameters that are placed next to the detector array structure. Experimental data shows good agreement with theoretical expectations.

Conference Presentation

Citation Download Citation

M. Halit Dolas, Okan Atesal, M. Deniz Caliskan, Alpan Bek, and Ekmel Ozbay "Low dark current diffusion limited planar type InGaAs photodetectors", Proc. SPIE 11129, Infrared Sensors, Devices, and Applications IX, 111290D (9 September 2019); https://doi.org/10.1117/12.2528666

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