Paper
17 May 2019 Micro-stripe broad-area infrared diode lasers without deterioration of output power
Author Affiliations +
Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 111700Q (2019) https://doi.org/10.1117/12.2532478
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China
Abstract
We demonstrated high power semiconductor diode lasers emitting around 2.1 μm with the micro-stripe broad area (MSBA) structure which was proposed to improve the broad area (BA) lasers’ lateral beam quality. 1.28W output power at 7A at continuous wave (CW) operation was achieved from the uncoated MSBA laser. It is shown that the micro-stripe structure would lead to worse threshold current and slope efficiency of the lasers because of the less-pumped lossy regions. However, the MSBA lasers would have better heat dissipation system with proper micro-stripe structure and gain advantages on power performance at high currents.
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Sheng-wen Xie, Zhi-chuan Niu, Cheng-Ao Yang, Yi Zhang, Jin-Ming Shang, Fu-Hui Shao, Yu Zhang, and Ying-qiang Xu "Micro-stripe broad-area infrared diode lasers without deterioration of output power", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111700Q (17 May 2019); https://doi.org/10.1117/12.2532478
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KEYWORDS
Semiconductor lasers

Infrared radiation

Infrared lasers

Laser damage threshold

Continuous wave operation

High power lasers

Semiconductors

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