Paper
17 May 2019 Application of femtosecond frequency combs in the measurement of film thickness
A. Ainijiang, A. Abuduresuli
Author Affiliations +
Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 111700Z (2019) https://doi.org/10.1117/12.2532673
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China
Abstract
In this paper, a method to measure the thickness of TiO2 is developed based on the Micklson interferometer. Through a spectral domain analysis of multiple interferograms obtained using a femtosecond pulse laser, accroding to the interferance signals appear in the interferograms the thickness of film can be measured at high speed. we developed a simple method to measure the film thickness and for a sample we use the silicon wafer and coated TiO2 silicon wafer. Thickness of silicon wafer and coated TiO2 silicon wafer were measured respectivly, then from the thickness of coated TiO2 silicon wafer minus the thickness of silicon wafer. Result shows that the avarege thickness of TiO2 is 75.00μm.
© (2019) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. Ainijiang and A. Abuduresuli "Application of femtosecond frequency combs in the measurement of film thickness", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111700Z (17 May 2019); https://doi.org/10.1117/12.2532673
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KEYWORDS
Semiconducting wafers

Silicon

Femtosecond phenomena

Wafer-level optics

Interferometers

Silicon films

Distance measurement

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