Control of saturable absorption of topological insulator Bi2Se3 by electron and hole doping

Runlin Miao; Yuze Hu; Tian Jiang

doi:10.1117/12.2533413

17 May 2019 Control of saturable absorption of topological insulator Bi₂Se₃by electron and hole doping

Runlin Miao, Yuze Hu, Tian Jiang

Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 111701J (2019) https://doi.org/10.1117/12.2533413
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China

Abstract

In this work, few layers of Bi₂Se₃ is chemically treated, in which the AuCl₃ solution is used for oxidation reaction to form p-doping, and BV solution (benzyl dichloride) is put to form n-doping to change material properties. We used pumpprobe system to verify the effect of doping on Bi₂Se₃ materials. In addition, the nonlinear saturable absorption of the material is also controlled. Through the I-scan test, we found that the saturable absorption has diverse responses to different wavelengths and doping conditions. By doping, the Fermi level of the material can be adjusted to control the saturable absorption of the material, which can be applied to the mode-locked laser. The weakened saturable light intensity can make the mode-locked pulse easier to generate.

Citation Download Citation

Runlin Miao, Yuze Hu, and Tian Jiang "Control of saturable absorption of topological insulator Bi₂Se₃by electron and hole doping", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111701J (17 May 2019); https://doi.org/10.1117/12.2533413

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