Graphene-MoS2 heterostructure transistor

W. P. Ren; Q. J. Wang; Q. H. Tan; Y. K. Liu

doi:10.1117/12.2533593

17 May 2019 Graphene-MoS₂ heterostructure transistor

W. P. Ren, Q. J. Wang, Q. H. Tan, Y. K. Liu

Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 1117027 (2019) https://doi.org/10.1117/12.2533593
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China

Abstract

In order to simplify the preparation process of Graphene and molybdenum disulfide (MoS₂) heterostructure transistors, a sessile drop method was proposed for sample preparation. In this paper, few-layers MoS₂ and monolayer Graphene liquid were prepared by liquid-phase exfoliation. Then the liquid was successively used to form a film on the Si substrate, which covered with 300nm SiO₂, by using spin-coater method. The Graphene/MoS₂ transistor was prepared by electron beam evaporation with a metal mask plate. The K4200 semiconductor analyzer and probe platform were used to characterize the transistor. We also see that Graphene/MoS₂ transistor is more sensitive to light from same wavelength. This fully demonstrates that the Graphene/MoS₂ transistor combines the selective absorption of light of MoS₂ and the characteristics of high carrier mobility of Graphene. And it greatly optimizes the performance of MoS₂ transistor and Graphene transistor. Thus, Graphene/ MoS₂ transistors, which produced by sessile drop method, will have more potential application in the electric and optoelectronic industry.

Citation Download Citation

W. P. Ren, Q. J. Wang, Q. H. Tan, and Y. K. Liu "Graphene-MoS₂ heterostructure transistor", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 1117027 (17 May 2019); https://doi.org/10.1117/12.2533593

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