The performance of mid-wave infrared HgCdTe e-avalanche photodiodes at SITP

Huijun Guo; Yushun Cheng; Lu Chen; Chun Lin; Hao Li; Honglei Chen; Ruijun Ding; Li He

doi:10.1117/12.2533729

17 May 2019 The performance of mid-wave infrared HgCdTe e-avalanche photodiodes at SITP

Huijun Guo, Yushun Cheng, Lu Chen, Chun Lin, Hao Li, Honglei Chen, Ruijun Ding, Li He

Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 111702M (2019) https://doi.org/10.1117/12.2533729
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China

Abstract

HgCdTe has been shown to be the first semiconductor exhibiting single-carrier multiplication in avalanche photodiodes (APDs) up to gain values larger than 1000 and with close to zero excess noise. These results have opened a new windows for low-flux and versatile imaging. In this paper, we report the latest results on MWIR HgCdTe APDs manufactured at SITP. These APDs display a gain of 1000 around 10V reverse bias. The excess noise factor is between 1.2 to 1.45 up to gain of 100, and the quantum efficiency is more than 60% from 1μm wavelength to peak wavelength 4.2 μm. These results show that the technological processes used at SITP are well adapted to APD manufacturing. However, at present, the dark current starts increasing significantly faster than the gain at high bias, and then the device becomes dark current noise limited. APD gain performance was successfully modeled by the simulation of electrical characteristics used Synopsys Sentaurus based on Okuto-Crowell ionizaition coefficient model. Therefore, Sentaurus would be used as a powerful predictive tool for SITP technology and stress its reproducibility and optimize the devices .

Citation Download Citation

Huijun Guo, Yushun Cheng, Lu Chen, Chun Lin, Hao Li, Honglei Chen, Ruijun Ding, and Li He "The performance of mid-wave infrared HgCdTe e-avalanche photodiodes at SITP", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111702M (17 May 2019); https://doi.org/10.1117/12.2533729

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Avalanche photodetectors

Mercury cadmium telluride

Mid-IR

Quantum efficiency

Electrons

Signal to noise ratio

Diodes

Show All Keywords

Keywords/Phrases

Search In:

Publication Years