Alternative mask materials for low-k1 EUV imaging

Frank J. Timmermans; Claire van Lare; Jo Finders

doi:10.1117/12.2535682

29 August 2019 Alternative mask materials for low-k1 EUV imaging

Frank J. Timmermans, Claire van Lare, Jo Finders

Proceedings Volume 11177, 35th European Mask and Lithography Conference (EMLC 2019); 111770Y (2019) https://doi.org/10.1117/12.2535682
Event: 35th European Mask and Lithography Conference, 2019, Dresden, Germany

Abstract

EUV lithography is being used at relatively high-k1 Rayleigh factors. Advancing EUV to smaller resolution requires several technological advancements. The EUV reticle is a strong contributor that limits current EUV imaging performance. Improvements with advanced mask types are required to reduce mask 3D effects and to improve image contrast. This will enable low-k1 resolution with reduced stochastic defect rates. In this paper we discuss what the requirements of high-k absorber masks and attenuated phase shift masks are to achieve optimal imaging performance. Recommendations on the mask stack composition and the application of mask types to different use cases are based on the physical understanding of the mask diffraction spectrum.

Citation Download Citation

Frank J. Timmermans, Claire van Lare, and Jo Finders "Alternative mask materials for low-k1 EUV imaging", Proc. SPIE 11177, 35th European Mask and Lithography Conference (EMLC 2019), 111770Y (29 August 2019); https://doi.org/10.1117/12.2535682

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