Study Of Indium Tin Oxide Films Exposed To Atomic Oxygen

Paul G. Snyder; Bhola N. De; John A . WoolIam; T. J. Coutts; X. Li

doi:10.1117/12.960955

26 October 1989 Study Of Indium Tin Oxide Films Exposed To Atomic Oxygen

Paul G. Snyder, Bhola N. De, John A . WoolIam, T. J. Coutts, X. Li

Proceedings Volume 1118, Space Optical Materials and Space Qualification of Optics; (1989) https://doi.org/10.1117/12.960955
Event: SPIE 1989 Technical Symposium on Aerospace Sensing, 1989, Orlando, FL, United States

Abstract

Indium tin oxide thin films (650 Å) were prepared by dc sputtering onto room temperature substrates. The films were exposed to an rf excited oxygen plasma, to qualitatively simulate the effects of atomic oxygen. Changes in optical, electrical, and structural properties were characterized as a function of exposure time.

Citation Download Citation

Paul G. Snyder, Bhola N. De, John A . WoolIam, T. J. Coutts, and X. Li "Study Of Indium Tin Oxide Films Exposed To Atomic Oxygen", Proc. SPIE 1118, Space Optical Materials and Space Qualification of Optics, (26 October 1989); https://doi.org/10.1117/12.960955

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