Paper
19 November 2019 Bandwidth optimization of germanium-doped silicon optical modulator for high-speed applications
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Abstract
This paper analyzes a germanium-doped silicon traveling wave Mach-Zehnder modulator (TWMZM) for high speed operation at 1550 nm wavelength. Single arm drive modulator performance using non-return-to-zero on-off keying (NRZ-OOK) driving scheme has been investigated. The phase-loss characteristics of the graded-index silicon-germanium PN phase shifter have been determined numerically. The traveling wave electrode has been designed for 1.5 mm long phase shifter. The 3 dB modulation bandwidth of the designed TWMZM is calculated to be 31 GHz at -2 V and an error-free operation of 59 Gbps has been obtained for 2 V peak-to-peak drive voltage with an extinction of ~6 dB.
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Darpan Mishra, Manoranjan Minz, Ramesh Kumar Sonkar, and Mohd. Mansoor Khan "Bandwidth optimization of germanium-doped silicon optical modulator for high-speed applications", Proc. SPIE 11193, Nanophotonics and Micro/Nano Optics V, 111930T (19 November 2019); https://doi.org/10.1117/12.2538873
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KEYWORDS
Silicon

Modulators

Optical modulators

Data integration

Channel projecting optics

Integrated optics

Internet

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