Paper
30 December 2019 Tailoring directional scattering of second-harmonic generation from (111)-GaAs nanoantennas
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Abstract
The group of zincblende III-V compound semiconductors, especially (100)-grown AlGaAs and GaAs, have recently been presented as promising materials for second harmonic generation (SHG) at the nanoscale. However, major obstacles to push the technology towards practical applications are the limited control over directionality of the SH emission and especially zero forward/backward radiation. In this work we provide both theoretically and experimentally a solution to these problems by presenting the first SHG nanoantennas made from (111)-GaAs embedded in a low index material. These nanoantennas show superior forward directionality compared to their (100)-counterparts. Most importantly, it is possible to manipulate the SHG radiation pattern of the nanoantennas by changing the pump polarization without affecting the linear properties and the total nonlinear conversion efficiency.
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J. Sautter, L. Xu, A. Miroshnichenko, M. Lysevych, I. Volkovskaya, D. Smirnova, M. Camacho Morales, K. Zangeneh Kamali, F. Karouta, K. Vora, H. H. Tan, M. Kauranen, I. Staude, C. Jagadish, D. N. Neshev, and M. Rahmani "Tailoring directional scattering of second-harmonic generation from (111)-GaAs nanoantennas", Proc. SPIE 11200, AOS Australian Conference on Optical Fibre Technology (ACOFT) and Australian Conference on Optics, Lasers, and Spectroscopy (ACOLS) 2019, 112000H (30 December 2019); https://doi.org/10.1117/12.2539086
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KEYWORDS
Nanoantennas

Second-harmonic generation

Polarization

Harmonic generation

Scattering

Crystals

Group III-V semiconductors

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