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10 March 2020 CIGS growth on a GaP/Si(001) platform: towards CIGS/Si tandem solar cells (Conference Presentation)
Olivier Durand, Antoine Létoublon, Charles Cornet, Ang Zhou, Nicolas Barreau, Eric Gautron, Matteo Balestrieri, Damien Coutancier, Lincot Daniel
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Proceedings Volume 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX; 1127505 (2020) https://doi.org/10.1117/12.2550687
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
We propose to explore tandem junctions associating single crystalline silicon bottom cell (bandgap of 1.12 eV) and CIGS top cell (bandgap of 1.7 eV), and using wide bandgap GaP intermediate layers. Our purpose is to grow CIGS films under epitaxial conditions on GaP to improve the CIGS top cell efficiency, thanks to a reduction of the structural defects density detrimental for the cell performance, so that CIGS-Si tandem solar cells can emerge as cost competitive for the next generation of PV modules. Epitaxy of CIGS on GaP/Si platform is demonstrated and preliminary results on CIGS cell on GaP/Si is reported.
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Olivier Durand, Antoine Létoublon, Charles Cornet, Ang Zhou, Nicolas Barreau, Eric Gautron, Matteo Balestrieri, Damien Coutancier, and Lincot Daniel "CIGS growth on a GaP/Si(001) platform: towards CIGS/Si tandem solar cells (Conference Presentation)", Proc. SPIE 11275, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX, 1127505 (10 March 2020); https://doi.org/10.1117/12.2550687
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KEYWORDS
Copper indium gallium selenide
Tandem solar cells
Solar cells
Crystals
Gallium arsenide
Germanium
Multijunction solar cells
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