Presentation
10 March 2020 Towards 2D fully integrated array of InGaN laser diodes (Conference Presentation)
Author Affiliations +
Abstract
Our goal is to fabricate a laser diode 2D array which combines the properties of both VCSEL and edge emitting laser. Proposed light emitter will have a horizontal cavity with 450 deflectors. The role of these deflectors would be to deflect light perpendicular to the cavity, achieving vertical out-coupling. The most challenging part of this project is the fabrication of the micro-mirrors which act as both as beam deviating mirrors and cavity forming mirrors. Owing to the excellent thermal conductivity of GaN substrates the properties of such a 2D array should be better than of conventional nitride laser diode arrays, not even mentioning nitride-based stacked bars systems. In this paper I will describe our new device design and processing, giving insight to its possible applications and advantages over simple light emitting laser diode.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Piotr Perlin, Anna Kafar, Kiran Saba, Krzysztof Gibasiewicz, Agata Bojarska, and Dario Schiavon "Towards 2D fully integrated array of InGaN laser diodes (Conference Presentation)", Proc. SPIE 11280, Gallium Nitride Materials and Devices XV, 112800R (10 March 2020); https://doi.org/10.1117/12.2544015
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KEYWORDS
Semiconductor lasers

Indium gallium nitride

Vertical cavity surface emitting lasers

Laser applications

Laser welding

Micromirrors

Mirrors

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