Elemental device technologies developed for lateral Ga2O3 metal-oxide-semiconductor field-effect transistors (Conference Presentation)

Masataka Higashiwaki; Takafumi Kamimura; Yoshiaki Nakata

doi:10.1117/12.2553903

10 March 2020 Elemental device technologies developed for lateral Ga₂O₃ metal-oxide-semiconductor field-effect transistors (Conference Presentation)

Masataka Higashiwaki, Takafumi Kamimura, Yoshiaki Nakata

Author Affiliations +

Proceedings Volume 11281, Oxide-based Materials and Devices XI; 112810N (2020) https://doi.org/10.1117/12.2553903
Event: SPIE OPTO, 2020, San Francisco, California, United States

Abstract

In this talk, we will present two elemental device technologies developed for lateral Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs). One is nitrogen doping to a Ga2O3 channel layer to realize normally-off operation of Ga2O3 MOSFETs, and the other is an (AlGa)2O3 back barrier to shift a threshold gate voltage of Ga2O3 MOSFETs with a Si-implanted channel toward the positive voltage side.

Conference Presentation

Citation Download Citation

Masataka Higashiwaki, Takafumi Kamimura, and Yoshiaki Nakata "Elemental device technologies developed for lateral Ga₂O₃ metal-oxide-semiconductor field-effect transistors (Conference Presentation)", Proc. SPIE 11281, Oxide-based Materials and Devices XI, 112810N (10 March 2020); https://doi.org/10.1117/12.2553903

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