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10 March 2020 Strain-induced waveguide integrated MoTe2 photodetector at 1550 nm (Conference Presentation)
Rishi Maiti, Chandraman Patil, Ti Xie, Volker J. Sorger
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Proceedings Volume 11282, 2D Photonic Materials and Devices III; 112820N (2020) https://doi.org/10.1117/12.2550283
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
In this work, we demonstrate a photodetector (PD) based on heterogeneous integration of Few-layer MoTe2 integrated on planarized and non-planarized Si waveguide operating at 1550 nm. Under a strong local tensile strain (4%), the bandgap of few layers MoTe2 shifts from 1 eV to 0.8 eV, enabling higher responsivity as compared to unstrained one.
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Rishi Maiti, Chandraman Patil, Ti Xie, and Volker J. Sorger "Strain-induced waveguide integrated MoTe2 photodetector at 1550 nm (Conference Presentation)", Proc. SPIE 11282, 2D Photonic Materials and Devices III, 112820N (10 March 2020); https://doi.org/10.1117/12.2550283
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KEYWORDS
Photodetectors
Waveguides
Photonic devices
Electronic components
Integrated photonics
Semiconductors
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