CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 11301 > Article
Presentation
9 March 2020 CW performance of QD lasers on silicon including carrier transport in the SCH barrier (Conference Presentation)
Marco Saldutti, Alberto Tibaldi, Federica Cappelluti, Francesco Bertazzi, Mariangela Gioannini
Author Affiliations +
Proceedings Volume 11301, Novel In-Plane Semiconductor Lasers XIX; 113010E (2020) https://doi.org/10.1117/12.2545946
Event: SPIE OPTO, 2020, San Francisco, California, United States
Abstract
Experiments on QD lasers grown on GaAs and on Si have revealed the quenching of the GS optical power as the current overcomes the ES threshold. A common technique to mitigate this quenching is the modulation p-doping, but an excessive p-doping level results in a deterioration of the GS optical power and threshold current. Theoretical models based on rate equations have ascribed the GS power quenching to the de-synchronization between the electron and hole dynamics. However, these approaches resort to phenomenological transport times. In this contribution, we study a 1.3 um QD laser grown on silicon by employing a drift-diffusion model for the transport of carriers across the SCH region. We show that the unbalance of electron and hole mobilities in the GaAs barriers is responsible for the GS quenching. The simulations also emphasize the existence of an optimum modulation p-doping level minimizing the GS threshold current, which we ascribe to electrostatic effects induced by this doping.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Marco Saldutti, Alberto Tibaldi, Federica Cappelluti, Francesco Bertazzi, and Mariangela Gioannini "CW performance of QD lasers on silicon including carrier transport in the SCH barrier (Conference Presentation)", Proc. SPIE 11301, Novel In-Plane Semiconductor Lasers XIX, 113010E (9 March 2020); https://doi.org/10.1117/12.2545946
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Silicon
Semiconductor lasers
Continuous wave operation
Gallium arsenide
Modulation
Integrated circuits
Integrated optics
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top