Presentation + Paper
30 March 2020 High-accuracy, high-speed, and smart metrology in the EUV era
Author Affiliations +
Abstract
As a follow-up to last year’s “What is prevalent CD-SEM's role in EUV era?” [1], here we report our ongoing progress on total metrology solutions for the sub-10-nm extreme ultraviolet (EUV) lithography process. We discuss two technical approaches that have emerged following our previous work. First, similar to conventional minimization processes, we focus on improvements in the top metrology task, down-to-ångström-order tool matching, namely, “atomic matching”, which is a crucially important feature in all in-line metrology tools in the EUV era. Second, we examine a comprehensive solution that enables EUV-characterized featured process monitoring with greater accuracy, higher speed, and smarter metrology.
Conference Presentation
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhigang Wang, Kei Sakai, Yasushi Ebizuka, Masumi Shirai, and Makoto Suzuki "High-accuracy, high-speed, and smart metrology in the EUV era", Proc. SPIE 11325, Metrology, Inspection, and Process Control for Microlithography XXXIV, 113251Q (30 March 2020); https://doi.org/10.1117/12.2551868
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Metrology

Extreme ultraviolet

Scanning electron microscopy

Artificial intelligence

Image processing

Semiconducting wafers

Critical dimension metrology

Back to Top