Sacrificial hardmask ALD with hydrogen peroxide: comparative study of low temperature growth and film characteristics for TiO2 and Al2O3

Daniel Alvarez Jr.; Keisuke Andachi; Gaku Tsuchibuchi; Katsumasa Suzuki; Jeff Spiegelman

doi:10.1117/12.2551699

23 March 2020 Sacrificial hardmask ALD with hydrogen peroxide: comparative study of low temperature growth and film characteristics for TiO₂ and Al₂O₃

Daniel Alvarez Jr., Keisuke Andachi, Gaku Tsuchibuchi, Katsumasa Suzuki, Jeff Spiegelman

Author Affiliations +

Proceedings Volume 11326, Advances in Patterning Materials and Processes XXXVII; 113260S (2020) https://doi.org/10.1117/12.2551699
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

Continued reliance on 193nm immersion lithography with multiple patterning is becoming much more difficult as line widths decrease. With the use of Self-Aligned Quadruple patterning and related patterning schemes, it is critical to minimize variability, where high quality films must be deposited and etch rates must be very precise. To this end, a better understanding of spacer material properties must be obtained. Initial work has been performed to examine the resulting film properties for TiO₂ and Al₂O₃ spacer materials deposited by low temperature ALD with the use of various oxidants (H₂O₂, H₂O, O₃). Improved film quality has been demonstrated for films deposited with H₂O/H₂O₂ mixtures used as the oxidant. Key to advanced patterning applications is that improved etch resistance is achieved for both Metal Oxide materials. Also significant with regard to multiple patterning is that higher growth rates are obtained at reduced temperatures, enabling lower process temperatures for underlying sensitive materials. The all thermal nature of these deposition methods points toward improved film conformality on 3-Dimensional structures. Improved etch rates and improved electrical properties reflect overall improvements in Metal Oxide dielectric film quality with the use of Hydrogen Peroxide.

Conference Presentation

Citation Download Citation

Daniel Alvarez Jr., Keisuke Andachi, Gaku Tsuchibuchi, Katsumasa Suzuki, and Jeff Spiegelman "Sacrificial hardmask ALD with hydrogen peroxide: comparative study of low temperature growth and film characteristics for TiO₂ and Al₂O₃", Proc. SPIE 11326, Advances in Patterning Materials and Processes XXXVII, 113260S (23 March 2020); https://doi.org/10.1117/12.2551699

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available