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23 March 2020 Exploring patterning limit and enhancement techniques to improve printability of 2D shapes at 3nm node
Rehab Kotb, Ahmed Hamed-Fatehy, James Word
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Proceedings Volume 11328, Design-Process-Technology Co-optimization for Manufacturability XIV; 113280F (2020) https://doi.org/10.1117/12.2552091
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States
Abstract
In this paper, we are proposing different techniques to enhance the printability of 2D shapes at 3nm node of Block/Cut shapes in self-Aligned Multi-patterning approaches. Multiple directions such as OPC optimization, fragmentation optimization, tagging, optimization of 2D shapes dimensions, controlling the direction of movement of OPC mask edges, using skew edges and more approaches are used to meet the printability specs of 3 nm node. In addition, a complete study to define the best dimensions to 2D junction of block/cut shape and its distance from metal line has been conducted. The results are evaluated based on the resulted EPE and PVBand. We managed to reach EPE< 1nm and PVBand < 3nm (IMEC specs at 3nm node).
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Rehab Kotb, Ahmed Hamed-Fatehy, and James Word "Exploring patterning limit and enhancement techniques to improve printability of 2D shapes at 3nm node", Proc. SPIE 11328, Design-Process-Technology Co-optimization for Manufacturability XIV, 113280F (23 March 2020); https://doi.org/10.1117/12.2552091
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KEYWORDS
Optical proximity correction
Image enhancement
Extreme ultraviolet lithography
Design for manufacturing
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