Paper
23 March 2020 Machine Learning assistant technology to facilitate Fin and 3D memory measurements on SEM and TEM images
Author Affiliations +
Abstract
We present a machine learning-based metrology pipeline for electron microscope imagery in the semiconductor industry. The pipeline is targeted to reduce the time spent by Process Engineers during research and development, by automating measurements of features according to their instructions in the form of a “measurement recipe”. Specifically, we present the principles and functionality of tools to measure Fin and 3D Memory structures based on edge finding algorithms, including through direct modelling of the SEM acquisition process to better capture blurred-appearing features.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Baderot, B. Darbon, N. Clement, M. Bryan, S. Martinez, and J. Foucher "Machine Learning assistant technology to facilitate Fin and 3D memory measurements on SEM and TEM images", Proc. SPIE 11329, Advanced Etch Technology for Nanopatterning IX, 113290X (23 March 2020); https://doi.org/10.1117/12.2552033
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KEYWORDS
3D metrology

Machine learning

Scanning electron microscopy

3D image processing

Process engineering

Image processing

Transmission electron microscopy

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