Advanced InP laser technologies for 400G and beyond hyperscale interconnections

Kazuhiko Naoe; Takayuki Nakajima; Yoshihiro Nakai; Yoriyoshi Yamaguchi; Yasushi Sakuma; Noriko Sasada

doi:10.1117/12.2560165

1 April 2020 Advanced InP laser technologies for 400G and beyond hyperscale interconnections

Kazuhiko Naoe, Takayuki Nakajima, Yoshihiro Nakai, Yoriyoshi Yamaguchi, Yasushi Sakuma, Noriko Sasada

Proceedings Volume 11356, Semiconductor Lasers and Laser Dynamics IX; 1135604 (2020) https://doi.org/10.1117/12.2560165
Event: SPIE Photonics Europe, 2020, Online Only

Abstract

High speed InP lasers have been developed for 400Gbit/s interconnections. Electro-absorption modulator integrated DFB lasers were demonstrated for 106-Gbit/s PAM4 with 0.9 Vpp from 20 to 85°C. 106-Gbit/s PAM4 eye-openings were obtained using directly modulated DFB lasers from 25 to 80°C.

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Citation Download Citation

Kazuhiko Naoe, Takayuki Nakajima, Yoshihiro Nakai, Yoriyoshi Yamaguchi, Yasushi Sakuma, and Noriko Sasada "Advanced InP laser technologies for 400G and beyond hyperscale interconnections", Proc. SPIE 11356, Semiconductor Lasers and Laser Dynamics IX, 1135604 (1 April 2020); https://doi.org/10.1117/12.2560165

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