P-doping effect on external optical feedback dynamics in 1.3-microns InAs/GaAs quantum dot laser epitaxially grown on silicon

Bozhang Dong; Jun-Da Chen; Han-Ling Tsay; Heming Huang; Jianan Duan; Justin C. Norman; John E. Bowers; Fan-Yi Lin; Frédéric Grillot

doi:10.1117/12.2555471

1 April 2020 P-doping effect on external optical feedback dynamics in 1.3-μm InAs/GaAs quantum dot laser epitaxially grown on silicon

Bozhang Dong, Jun-Da Chen, Han-Ling Tsay, Heming Huang, Jianan Duan, Justin C. Norman, John E. Bowers, Fan-Yi Lin, Frédéric Grillot

Author Affiliations +

Proceedings Volume 11356, Semiconductor Lasers and Laser Dynamics IX; 113560C (2020) https://doi.org/10.1117/12.2555471
Event: SPIE Photonics Europe, 2020, Online Only

Abstract

This work reports on the optical feedback dynamics of InAs/GaAs QD lasers epitaxially grown on silicon operating in both the short and long delay regimes. Both undoped and p-doped QD lasers are considered. Whatever the external cavity length, no chaotic oscillations are observed on both samples as a result of the small α-factor observed in the silicon QD lasers. Despite that, experiments conducted in the short-cavity region raise period-one oscillation for the undoped QD laser. In addition, the transition from the short to long delay regimes can be finely covered by varying the external cavity length from 5 cm to 50 cm, and the boundaries associated to the appearance of the periodic oscillation are identified. In the short-cavity region, boundaries show some residual undulations resulting from interferences between internal and external cavity modes; whereas in the long-delay regime, the feedback ratio delimiting the boundaries keeps decreasing, until it progressively becomes rather in- dependent of the external cavity length. Overall, our results showed that the p-doped device clearly exhibits a much higher tolerance to the different external feedback conditions than the undoped one, seeing that its periodic oscillation boundaries are barely impossible to retrieve at the maximum feedback strength of -7 dB. These results show for the first time the p-modulation doping effect on the enhancement of feedback insensitivity in both short- and long-delay configurations, which is of paramount importance for the development of ultra-stable silicon transmitters for photonic technologies.

Conference Presentation

Citation Download Citation

Bozhang Dong, Jun-Da Chen, Han-Ling Tsay, Heming Huang, Jianan Duan, Justin C. Norman, John E. Bowers, Fan-Yi Lin, and Frédéric Grillot "P-doping effect on external optical feedback dynamics in 1.3-μm InAs/GaAs quantum dot laser epitaxially grown on silicon", Proc. SPIE 11356, Semiconductor Lasers and Laser Dynamics IX, 113560C (1 April 2020); https://doi.org/10.1117/12.2555471

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available