Low dark current designs for mesa type SWIR photodetectors

Alper Şahin; Serdar Kocaman

doi:10.1117/12.2558589

19 May 2020 Low dark current designs for mesa type SWIR photodetectors

Alper Şahin, Serdar Kocaman

Proceedings Volume 11407, Infrared Technology and Applications XLVI; 1140704 (2020) https://doi.org/10.1117/12.2558589
Event: SPIE Defense + Commercial Sensing, 2020, Online Only

Abstract

Extremely low level dark current values are required for SWIR detection during the night when there is no active illumination due to weak sources and the lack of self emission. InGaAs detectors with planar pixel structures are the popular choice in SWIR range, even though there are some shortcomings such as the incompatability with dual color applications and the not tunable cut-off wavelength. To address these points, two nBn structured photodetector designs covering SWIR and extended SWIR in InGaAs material system will be discussed here.

Conference Presentation

Citation Download Citation

Alper Şahin and Serdar Kocaman "Low dark current designs for mesa type SWIR photodetectors", Proc. SPIE 11407, Infrared Technology and Applications XLVI, 1140704 (19 May 2020); https://doi.org/10.1117/12.2558589

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