Quantitative IR-Spectroscopy Of Interstitial Oxygen In Heavily Doped Silicon

A. Borghesi; M. Geddo; G Guizzetti; P. Geranzani

doi:10.1117/12.969485

1 December 1989 Quantitative IR-Spectroscopy Of Interstitial Oxygen In Heavily Doped Silicon

A. Borghesi, M. Geddo, G Guizzetti, P. Geranzani

Proceedings Volume 1145, 7th Intl Conf on Fourier Transform Spectroscopy; (1989) https://doi.org/10.1117/12.969485
Event: Seventh International Conference on Fourier and Computerized Infrared Spectroscopy, 1989, Fairfax, VA, United States

Abstract

The interstitial oxygen content of heavily Sb-doped silicon wafers, up to 2 x 10¹⁸ at/cm3, has been measured by FTIR transmission, using a short baseline. The results of systematic measurements of two lots of 16 samples each, performed with FTIR and SIMS techniques, show a linear correlation between the two sets, although the IR technique estimates are consistently lower than those from SIMS.

Citation Download Citation

A. Borghesi, M. Geddo, G Guizzetti, and P. Geranzani "Quantitative IR-Spectroscopy Of Interstitial Oxygen In Heavily Doped Silicon", Proc. SPIE 1145, 7th Intl Conf on Fourier Transform Spectroscopy, (1 December 1989); https://doi.org/10.1117/12.969485

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