Elucidating the radiation chemistry of prototypical tin-oxo resist with first-principles computations

Jonathan H. Ma; Patrick P. Naulleau; David Prendergast; Andrew Neureuther

doi:10.1117/12.2588731

22 February 2021 Elucidating the radiation chemistry of prototypical tin-oxo resist with first-principles computations

Jonathan H. Ma, Patrick P. Naulleau, David Prendergast, Andrew Neureuther

Proceedings Volume 11609, Extreme Ultraviolet (EUV) Lithography XII; 116091B (2021) https://doi.org/10.1117/12.2588731
Event: SPIE Advanced Lithography, 2021, Online Only

Abstract

Metal-organic systems have shown great promise as EUV resists. They have demonstrated good sensitivity and etch resistance while maintaining high resolution and low line edge roughness, making them a potential pathway to modify the tradeoff between resolution, line edge roughness, and sensitivity common to organic chemically amplified resists. In particular, tin-based systems have attracted significant interest and the two known families of fab-ready metal organic resist are based on organotin compounds. Part of this interest derives from the high EUV absorption cross-section of tin, but an equally important driver is the unique chemistry of the element, which affords a multiplicity of coordination environments and a tin-carbon bond stable with respect to hydrolysis, yet sensitive to cleavage by ionizing radiation. Realizing the patterning potential promised by these empirical properties will require a better understanding of the fundamental chemistry behind them, and has already motived several academic and industrial investigations. In this contribution we continue our previous work to develop a deeper understanding of tin-carbon bond chemistry with quantum chemistry using the well-known Sn12 “football” cluster archetype. We demonstrate the consistency between our computations and experimental data. And then we move on to explore a more detailed description of ionization and electron attachment induced chemistry. Investigations of electronic structure would shed light on what chemical reactions can happen subsequently.

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Jonathan H. Ma, Patrick P. Naulleau, David Prendergast, and Andrew Neureuther "Elucidating the radiation chemistry of prototypical tin-oxo resist with first-principles computations", Proc. SPIE 11609, Extreme Ultraviolet (EUV) Lithography XII, 116091B (22 February 2021); https://doi.org/10.1117/12.2588731

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KEYWORDS

Chemistry

Extreme ultraviolet

Line edge roughness

Etching

Ionization

Ionizing radiation

Metals

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