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26 February 2021 Directional and selective patterning of EUV absorbers
Xia Sang, Yantao Xia, Jane P. Chang, Philippe Sautet
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Proceedings Volume 11615, Advanced Etch Technology and Process Integration for Nanopatterning X; 1161503 (2021) https://doi.org/10.1117/12.2585410
Event: SPIE Advanced Lithography, 2021, Online Only
Abstract
The talk presents pertinent surface chemistries required to achieve a highly anisotropic etch of metal absorbers for EUV masks, with the goal of realizing a nearly vertical sidewall angle of 90º. The selection of gas phase chemistries is crucial to the success of the patterning process, therefore the selection criteria, based on thermodynamic and kinetic assessment, will be explained. The general approach combines either reactive ion etching or ion beam etching with atomic layer etching processes where the sequential surface reactions starts with controlled surface modification, followed by selective removal of the modified layer. This general approach can be applied to a variety of EUV mask materials, making it possible to tackle more complex material systems as needed.
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Xia Sang, Yantao Xia, Jane P. Chang, and Philippe Sautet "Directional and selective patterning of EUV absorbers", Proc. SPIE 11615, Advanced Etch Technology and Process Integration for Nanopatterning X, 1161503 (26 February 2021); https://doi.org/10.1117/12.2585410
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KEYWORDS
Extreme ultraviolet
Optical lithography
Etching
Reactive ion etching
Chemistry
Anisotropic etching
Complex systems
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