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5 March 2021 Efficient frequency conversion in OP-GaP grown on OP-GaAs templates
Peter G. Schunemann, Carl Farrell, Kerr Johnson, Derryck T. Reid, Luke Maidment
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Proceedings Volume 11670, Nonlinear Frequency Generation and Conversion: Materials and Devices XX; 116700M (2021) https://doi.org/10.1117/12.2583552
Event: SPIE LASE, 2021, Online Only
Abstract
Here we report for the first time nonlinear frequency conversion in OP-GaP layers grown by hydride vapor-phase epitaxy on OP-GaAs templates. Multi-grating 3-inch wafer design enabled discrete wavelength tuning via stepped gratings, continuous tuning via fan gratings, and bandwidth engineering via chirped gratings, with 14- 35.2-micron periods that propagated up to 300 microns in a 1.2-mm-thick layer before breakdown. Polished, AR-coated, 3-mm-long OPO crystals were fabricated and pumped at 1040 nm (5.5W, 100 MHz, 2.5 ps) with a Chromacity Yb-fiber laser, yielding output powers of 140, 90, and 60 mW at idler wavelengths of 5.6, 7.8, and 10.7 microns respectively
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Peter G. Schunemann, Carl Farrell, Kerr Johnson, Derryck T. Reid, and Luke Maidment "Efficient frequency conversion in OP-GaP grown on OP-GaAs templates", Proc. SPIE 11670, Nonlinear Frequency Generation and Conversion: Materials and Devices XX, 116700M (5 March 2021); https://doi.org/10.1117/12.2583552
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KEYWORDS
Frequency conversion
Gallium arsenide
Optical design
Optical parametric oscillators
Picosecond phenomena
Polishing
Semiconducting wafers
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