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5 March 2021 Highly doped AlN nanowire pn junction: a step towards a new generation of UV-C LEDs
Rémy Vermeersch, Alexandra-Madalina Siladie, Gwénolé Jacopin, Ana Cros, Nuria Garro, Eric Robin, Damien Caliste, Pascal Pochet, Fabrice Donatini, Julien Pernot, Bruno Daudin
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Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 116860V (2021) https://doi.org/10.1117/12.2576681
Event: SPIE OPTO, 2021, Online Only
Abstract
Using Si for n-type doping and Mg/In co-doping for p-type, AlN nanowire p-n junctions were demonstrated [1]. Optimal electrical activation of acceptor impurities was achieved by electron irradiation. Current voltage characteristics in forward bias conditions have established that the current was varying as Vn, (with n larger than 6) before activation while a space charge limited current regime was observed after activation. The formation of AlN NW p-n junction was assessed by electron beam induced current (EBIC) experiments, putting in evidence the electrical field associated with the junction. [1] A. M. Siladie et al, Nano Lett. 2019, 19, 8357−8364
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Rémy Vermeersch, Alexandra-Madalina Siladie, Gwénolé Jacopin, Ana Cros, Nuria Garro, Eric Robin, Damien Caliste, Pascal Pochet, Fabrice Donatini, Julien Pernot, and Bruno Daudin "Highly doped AlN nanowire pn junction: a step towards a new generation of UV-C LEDs", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 116860V (5 March 2021); https://doi.org/10.1117/12.2576681
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KEYWORDS
Aluminum nitride
Light emitting diodes
Nanowires
Magnesium
Deep ultraviolet
Doping
Electron beams
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