Demonstration of uniform 6x6 GaN p-i-n UV avalanche photodiode arrays

Marzieh Bakhtiary-Noodeh; Minkyu Cho; Zhiyu Xu; Hoon Jeong; A. Nepomuk Otte; Shyh-Chiang Shen; Theeradetch Detchprohm; Ashok K. Sood; John W. Zeller; Parminder Ghuman; Sachidananda Babu; Russell D. Dupuis

doi:10.1117/12.2576888

5 March 2021 Demonstration of uniform 6x6 GaN p-i-n UV avalanche photodiode arrays

Marzieh Bakhtiary-Noodeh, Minkyu Cho, Zhiyu Xu, Hoon Jeong, A. Nepomuk Otte, Shyh-Chiang Shen, Theeradetch Detchprohm, Ashok K. Sood, John W. Zeller, Parminder Ghuman, Sachidananda Babu, Russell D. Dupuis

Author Affiliations +

Proceedings Volume 11686, Gallium Nitride Materials and Devices XVI; 1168614 (2021) https://doi.org/10.1117/12.2576888
Event: SPIE OPTO, 2021, Online Only

Abstract

Front-illuminated p-i-n GaN-based ultraviolet (UV) avalanche photodiodes (APDs) were grown by metalorganic chemical vapor deposition (MOCVD) on 25 mm dia. bulk Ammono® n-GaN substrate having a low etch pit density (EPD) less than 5 × 10⁴ [cm^-2] and processed into 6×6 APD arrays. The devices employed N-ion implantation to achieve sidewall passivation. Evaluation of these 6×6 arrays will help to confirm the uniformity of the epitaxial materials and device processing. The maximum avalanche gain reached ~ 3×10⁵ at the breakdown (current limited). The dark current density was 10^-9 A/cm² at reverse bias up to -20 V and the APDs exhibited a reverse breakdown voltage of 81 ± 1 V for all 36 devices without any leaky devices, confirming a high uniformity of the growth and fabrication processes.

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Marzieh Bakhtiary-Noodeh, Minkyu Cho, Zhiyu Xu, Hoon Jeong, A. Nepomuk Otte, Shyh-Chiang Shen, Theeradetch Detchprohm, Ashok K. Sood, John W. Zeller, Parminder Ghuman, Sachidananda Babu, and Russell D. Dupuis "Demonstration of uniform 6x6 GaN p-i-n UV avalanche photodiode arrays", Proc. SPIE 11686, Gallium Nitride Materials and Devices XVI, 1168614 (5 March 2021); https://doi.org/10.1117/12.2576888

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