Interface quality informed by quantum-based magnetoconductivity: ITO on fused silica

David C. Look; Kevin D. Leedy; Marco D. Santia; Stefan C. Badescu; Hyung_Min Jeon

doi:10.1117/12.2584192

5 March 2021 Interface quality informed by quantum-based magnetoconductivity: ITO on fused silica

David C. Look, Kevin D. Leedy, Marco D. Santia, Stefan C. Badescu, Hyung_Min Jeon

Proceedings Volume 11687, Oxide-based Materials and Devices XII; 116871R (2021) https://doi.org/10.1117/12.2584192
Event: SPIE OPTO, 2021, Online Only

Abstract

Quantum magnetoconductance, delta-sigma(B)=sigma(B)-sigma(0), offers a new, unique way to study phonons in heavily-doped, complex semiconductors, including beta-Ga2O3 and Sn-doped In2O3 (ITO). At low temperature, theory predicts delta-sigma(B)=2.908B^(1/2) S/cm, shown to be true for thick, but not thin, samples. We grew ten ITO films by PLD on fused silica, d=13–292 nm. The thickness dependence was explained by a new delta-sigma(d)-vs-d theory based on a second source of disorder, interface-generated defects that decrease exponentially with distance from the ITO/FS interface. A fit of delta-sigma(d)-vs-d gives three parameters, including d*, the thickness above which the surface is not affected by interface damage.

Conference Presentation

Citation Download Citation

David C. Look, Kevin D. Leedy, Marco D. Santia, Stefan C. Badescu, and Hyung_Min Jeon "Interface quality informed by quantum-based magnetoconductivity: ITO on fused silica", Proc. SPIE 11687, Oxide-based Materials and Devices XII, 116871R (5 March 2021); https://doi.org/10.1117/12.2584192

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