High-performance hybrid graphene photodetectors were prepared with fullerenes and metallofullerenes deposited on graphene using electrophoretic deposition technique. Fullerene C60 which acts as an electron acceptor, and metallofullerene Sc3N@C80 which act as an electron acceptor and electron donor respectively, were used to decorate the surface of the graphene. Raman spectroscopy analysis of C60 film after electrophoretic deposition and annealing reveals no change in bonding or chemical composition. Both Raman area map and AFM topography scans reveal a continuous film like deposition of C60 between electrodes during electrophoretic deposition. The charge transfer between graphene and fullerene/metallofullerene and consequent photocurrent generation contribute to a high photoresponsivity ℛ in our hybrid graphene detectors. The responsivity ℛ of the C60 - graphene and Sc3N@C80 – graphene hybrids were measured to be ~ 109 A/W, while the detectivity and external quantum efficiency were also exceptional, ~ 1015 Jones and ~ 109 %, respectively. The exceptional performance gains achieved with graphene–0D hybrid structures confirm the potential of endohedrals and metallofullerenes to dope graphene for high performance optoelectronic devices using a facile and scalable fabrication process.
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