Integrated tunable lasers based on the co-integration of InP-based SOAs with low-loss Si3N4 dielectric waveguides have emerged as promising solutions in applications where the control of light phase is fundamental. Μicrowave photonics, coherent communications and LIDARs are only some of the applications where sub-KHz linewidths have already been achieved. Nevertheless, the majority of these demonstrations are based on Si3N4 platforms featuring thicknesses lower than 300nm and providing modes with effective indices below 1.6 imposing a major restriction on the achievable FSR values and devices’ footprint. In this work, we present the design of Vernier ring-inspired reflectors based on an 800nm- thick Si3N4 platform providing a TE fundamental mode with an effective index close to 1.71 for a width of 800nm, a group index close to 2.08 at λ=1550nm wavelength, and propagation losses as low as 0.2dB/cm. The proposed thick- Si3N4 designs are based on a simple dual ring Vernier configuration achieving an experimental FSR near 38nm and a 15dB side-mode suppression. These results are in close agreement with the ones obtained theoretically through a detailed Transfer Matrix Formulation verifying the accuracy of the presented semi-analytical model. This simulation model is then employed for the prediction of the performance of more advanced structures such as triple cascaded and high-order Vernier Ring designs, towards extending the achievable FSR and SMSR metrics.
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