Presentation + Paper
5 March 2021 First demonstration of a hybrid integrated InP-Si3N4 diode laser for broadband optical frequency comb generation
H. M. J. Bastiaens, G. Neijts, A. Memon, Y. Fan, J. Mak, D. Geskus, M. Hoekman, V. Moskalenko, E. A. J. M. Bente, K.-J. Boller
Author Affiliations +
Abstract
We demonstrate the first on-chip laser frequency comb based on hybrid integration with low-loss Si3N4 waveguide circuits. The laser comprises an InP diode amplifier of which a small fraction is reverse biased for passive locking, while a Si3N4 feedback waveguide extends the optical cavity to a roundtrip length of 15 cm. The generated comb densely covers a 25 nm broad spectrum, at a 3 dB level, with more than 1600 comb-lines at 2 GHz spacing. With such properties, hybrid integrated diode lasers show great promise for widespread use in applications such as integrated microwave photonics or metrology.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
H. M. J. Bastiaens, G. Neijts, A. Memon, Y. Fan, J. Mak, D. Geskus, M. Hoekman, V. Moskalenko, E. A. J. M. Bente, and K.-J. Boller "First demonstration of a hybrid integrated InP-Si3N4 diode laser for broadband optical frequency comb generation", Proc. SPIE 11705, Novel In-Plane Semiconductor Lasers XX, 1170508 (5 March 2021); https://doi.org/10.1117/12.2593818
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KEYWORDS
Semiconductor lasers

Frequency combs

Integrated optics

Laser optics

Laser stabilization

Light sources

Mode locking

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