Paper
2 December 2020 Fabrication of high-power 2μm GaSb-based laser
Yihang Chen, Yi Zhang, Cheng'ao Yang, Jinming Shang, Yingqiang Xu, Haibao Tong, Zhengwei Ren, Sensen Lee, Yu Zhang, Zhichuan Niu
Author Affiliations +
Proceedings Volume 11717, 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics; 117172B (2020) https://doi.org/10.1117/12.2587266
Event: 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics, 2020, Shanghai, China
Abstract
High-power InGaSb/AlGaAsSb quantum well separate confinement structure lasers are fabricated. Threshold currents of the sample lasers range from 150mA to 270mA, turn-on voltages range from 0.51V to 0.59V. Stable high power and high efficiency operation is achieved, output powers at 3A range from 978mW to 1050mW, the power conversion efficiencies at 3A range from 21.3% to 22.9%, slop efficiencies range from 0.35W/A to 0.38W/A. The capability of fabricating reliable high-power 2μm GaSb-based laser is confirmed. The current of one sample was ramped up to 6A, the emitter exhibits a high performance with peak output power of 1320mW at 5.4A,maximum power conversion efficiency of 27.5% and slop efficiency of 0.34W/A.
© (2020) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yihang Chen, Yi Zhang, Cheng'ao Yang, Jinming Shang, Yingqiang Xu, Haibao Tong, Zhengwei Ren, Sensen Lee, Yu Zhang, and Zhichuan Niu "Fabrication of high-power 2μm GaSb-based laser", Proc. SPIE 11717, 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics, 117172B (2 December 2020); https://doi.org/10.1117/12.2587266
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