Paper
2 December 2020 Structural design of mode propagation interface for tapered laser diodes
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Proceedings Volume 11717, 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics; 117172H (2020) https://doi.org/10.1117/12.2587313
Event: 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics, 2020, Shanghai, China
Abstract
High-brightness tapered diode lasers generally work in the fundamental transverse mode. Still, under the condition of high power, the beam quality is often deteriorated by the influence of higher-order modes. At the junction of the device ridge waveguide and the conical amplifier, there is a great difference in the refractive index step △n, which is the key area for producing high-order modes and influencing each other. In this paper, the physical process of high-order side mode excitation in a large optical cavity InGaAs/AlGaAs conical LD was studied. The mode changes of the propagation interface were simulated by the eigenmode expansion method (EME). The effects of various separation distances of the beam spoilers were compared and verified by experiments. The results show that through the practical design of the separation distance of beam spoilers at the mode propagation interface, the tapered LD can maintain the high beam quality of M2=1.9 at 3.2 W.
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Yi Li, Kun Zhou, Linan He, Weichuan Du, LanPing Zhang, Yao Hu, Xin Yang, Songxin Gao, and Chun Tang "Structural design of mode propagation interface for tapered laser diodes", Proc. SPIE 11717, 24th National Laser Conference & Fifteenth National Conference on Laser Technology and Optoelectronics, 117172H (2 December 2020); https://doi.org/10.1117/12.2587313
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