Research progress of SiGe heterojunction photodetectors

Weiying Hu; Xiumin Xie; Qiang Xu; Wei Zhang; Haizhi Song

doi:10.1117/12.2588373

12 March 2021 Research progress of SiGe heterojunction photodetectors

Weiying Hu, Xiumin Xie, Qiang Xu, Wei Zhang, Haizhi Song

Proceedings Volume 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications; 11763A4 (2021) https://doi.org/10.1117/12.2588373
Event: Seventh Symposium on Novel Photoelectronic Detection Technology and Application 2020, 2020, Kunming, China

Abstract

To realize the near-infrared detection of silicon-based detectors and avoid the incompatibility between III-V photodetectors and silicon-based integrated circuits, the development of Ge/Si detectors has become a research hotspot, with the breakthrough of preparation technology of Ge / Si heterojunction materials. In this paper, the research progress of Ge / Si heterojunction photodetectors in the wavelength range of 1.1μm to 1.6μm is summarized from the aspects of the device structure, working principle, the current situation at home and abroad, the advantages and disadvantages, and so on.

Citation Download Citation

Weiying Hu, Xiumin Xie, Qiang Xu, Wei Zhang, and Haizhi Song "Research progress of SiGe heterojunction photodetectors", Proc. SPIE 11763, Seventh Symposium on Novel Photoelectronic Detection Technology and Applications, 11763A4 (12 March 2021); https://doi.org/10.1117/12.2588373

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