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1 August 2021 Active plasmonic optoelectronics
Leland J. Nordin, Abhilasha Kamboj, Evan Simmons, Priyanka Petluru, Aaron Muhowski, Andrew Briggs, Seth Bank, Viktor Podolskiy, Daniel M. Wasserman
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Proceedings Volume 11796, Active Photonic Platforms XIII; 117960F (2021) https://doi.org/10.1117/12.2593520
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States
Abstract
In this talk I will discuss our group’s work on the design, growth, fabrication and characterization of a new class of all-epitaxial plasmonic optoelectronic devices with enhanced performance when compared to state-of-the-art infrared optoelectronics. Specifically, we demonstrate that highly doped semiconductors, serving as ‘designer’ plasmonic materials, can be monolithically integrated with a range of infrared optoelectronic device architectures to provide strong field confinement, and enhanced emission, detection, and potentially modulation capabilities in the mid-infrared. We will present results from long-wave infrared detectors with thickness of only 350 nm, capable of over 50% external quantum efficiency and state-of-the-art detectivity, as well as dual color detectors, spectrally-selective detectors, and enhanced efficiency emitters leveraging our designer plasmonic materials with a range of novel device architectures.
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Leland J. Nordin, Abhilasha Kamboj, Evan Simmons, Priyanka Petluru, Aaron Muhowski, Andrew Briggs, Seth Bank, Viktor Podolskiy, and Daniel M. Wasserman "Active plasmonic optoelectronics", Proc. SPIE 11796, Active Photonic Platforms XIII, 117960F (1 August 2021); https://doi.org/10.1117/12.2593520
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KEYWORDS
Mid-IR
Optoelectronics
Active plasmonics
Optoelectronic devices
Optical design
Photonics
Plasmonics
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