Modulation Doping with a 2D Magnet

Kenneth Burch

doi:10.1117/12.2595786

2 August 2021 Modulation Doping with a 2D Magnet

Kenneth Burch

Proceedings Volume 11805, Spintronics XIV; 1180520 (2021) https://doi.org/10.1117/12.2595786
Event: SPIE Nanoscience + Engineering, 2021, San Diego, California, United States

Abstract

Two-dimensional (2d) nano-electronics, plasmonics, spintronics and emergent phases require clean and local charge control, calling for layered, crystalline acceptors or donors. Here I will describe how the Relativistic Mott Insulating state of RuCl3, a 2D antiferromagnet, provides a new opportunity to introduce modulation doping into 2D materials. Specifically, we demonstrate and optimize this charge transfer with extensive Raman, photovoltage, and electrical conductance measurements combined with ab initio calculations. Also, we find the doping is exceptionally local, can occur through hBN, works with various exfoliated, CVD, and MBE materials. Time permitting, I will discuss new opportunities this opens for nanoplasmonic, optoelectronics, and correlated phases.

Conference Presentation

Citation Download Citation

Kenneth Burch "Modulation Doping with a 2D Magnet", Proc. SPIE 11805, Spintronics XIV, 1180520 (2 August 2021); https://doi.org/10.1117/12.2595786

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