Presentation
1 August 2021 Room-temperature ferroelectric control of spin-to-charge conversion in GeTe
Sara Varotto, Luca Nessi, Stefano Cecchi, Jagoda Slawinska, Paul Noël, Federico Fagiani, Matteo Cantoni, Marcio Costa, Raffaella Calarco, Marco Buongiorno Nardelli, Manuel Bibes, Silvia Picozzi, Jean-Philippe Attané, Laurent Vila, Riccardo Bertacco, Christian C. Rinaldi
Author Affiliations +
Abstract
Since the 1980s, the generation and detection of spin currents has relied on ferromagnets. Their switching today relies on spin-orbit torque from heavy metals. Nevertheless, spin injection in semiconductors has rather low efficiency. Ferroelectric Rashba semiconductors (FERSC) [1,2] may constitute a new paradigm for semiconductor spintronics, thanks to the combination of semiconductivity, large spin-orbit interaction, and the non-volatility provided by ferroelectricity. Here we report the room-temperature ferroelectric switching of spin-to-charge conversion in epitaxial GeTe films. We first show that ferroelectricity in GeTe can be reversed by electrical gating despite its high carrier density. Then, we reveal a spin-to-charge conversion as effective as in Pt, but whose sign switches with the ferroelectric polarization. These results open a route towards devices combining spin-logic and memory integrated into a silicon-compatible material.
Conference Presentation
© (2021) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sara Varotto, Luca Nessi, Stefano Cecchi, Jagoda Slawinska, Paul Noël, Federico Fagiani, Matteo Cantoni, Marcio Costa, Raffaella Calarco, Marco Buongiorno Nardelli, Manuel Bibes, Silvia Picozzi, Jean-Philippe Attané, Laurent Vila, Riccardo Bertacco, and Christian C. Rinaldi "Room-temperature ferroelectric control of spin-to-charge conversion in GeTe", Proc. SPIE 11805, Spintronics XIV, 118052A (1 August 2021); https://doi.org/10.1117/12.2596102
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